As a result of the foregoing, a reverse-connected transistor might be permanently damaged. Moreover, because of the decreased V CEO, the transistor might break down when it turns off. In this case, h FE decreases, making it impossible for a bipolar transistor to function as intended and possibly causing the base current to exceed its specified rating. One of the outside layers is called the emitter, and the other is known as the collector. If the connections of the collector and emitter terminals are reversed, the above relationship is not satisfied. For these parameters, the collector terminal is considered to be biased in the reverse direction when it is made positive for npn transistors or negative for. Therefore, the dopant concentrations in the three semiconductor regions have the following relationship: emitter > base > collector. Collector The section which collects the major portion of the majority charge carrier supplied by the emitter is called a collector. There are three ways to connect a bipolar junction transistor into a working circuit. reducing the dopant concentration in the collector region. Common Base, Common Emitter, And Common-collector Configurations.reducing the thickness of the base region.GateEmitter voltage (V GES): This parameter determines the maximum allowable gateemitter voltage, when collector is shorted to emitter. making the dopant concentration in the emitter region higher than that in the base region EmitterCollector blocking voltage (BV ECS): This parameter specifies the reverse breakdown of the collectorbase junction of the pnp transistor component of IGBT.It is also necessary to control the depletion layer in the collector region in order to increase a transistor’s withstand voltage (i.e., collector-base voltage, V CBO). To accomplish this, numerous majority carriers (electrons in the case of npn transistors) in the emitter must diffuse into the base region and then be efficiently swept across the base region into the collector. Generally, bipolar transistors are designed in such a manner as to achieve high h FE. To accomplish this, numerous majority carriers (electrons in the case of npn transistors) in the emitter must diffuse into the base region and then be. Interchanging the collector and emitter terminals not only degrades the transistor performance but also might cause permanent damage to the device. Transistors are designed to provide the optimum performance when they are correctly connected. For the common base transistor, current gain equals the ratio of collector current to that of the emitter current.

Transistor emitter collector base